1998. 7. 1 1/3 semiconductor technical data KTA1024 epitaxial planar pnp transistor revision no : 1 dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ high voltage application. features high voltage : v ceo =-150v. low output capacitance : c ob =5.0pf(max.). high transition frequency : f t =120mhz (typ.). complementary to ktc3206. maximum rating (ta=25 1 ) electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -150 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current i c -50 ma emitter current i e 50 ma collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 note : h fe classification o:70 140, y:120 240 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-150v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-5v, i c =-10ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma - - -0.8 v base-emitter voltage v be v ce =-5v, i c =-30ma - - -0.9 v transition frequency f t v ce =-30v, i c =-10ma - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 5.0 pf
1998. 7. 1 2/3 KTA1024 revision no : 1 collector current i (ma) h - i fe dc current gain h c i - v c ce ce collector-emitter voltage v (v) 0 -10 c 0 collector current i (ma) v - i ce(sat) c c collector current i (ma) -0.6 -0.03 ce(sat) collector-emitter saturation dc current gain h fe 500 -0.5 collector current i (ma) c c fe h - i -2 -4 -6 -8 -10 -12 -20 -30 -40 -50 common emitter ta=25 c i =-100 a b -200 a -300 a -500 a -1ma -2ma -1 -3 -10 -30 -100 10 30 50 100 300 common emitter ta=25 c v =-10v ce c e v =-5 v v =- 2v ce c fe v =-5v common emitter 300 100 50 30 10 -100 -30 -10 -3 -1 -0.5 500 ta=100 c ta=25 c ta=-25 c collector-emitter saturation ce(sat) -0.6 collector current i (ma) c c ce(sat) v - i voltage v (v) -1 -3 -10 -30 -100 -300 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 ce common emitter ta=25 c i / i = 2 0 c b i / i =1 0 c b i / i =5 c b voltage v (v) -1 -3 -10 -30 -100 -300 -0.03 -0.1 -0.05 -0.3 -0.5 -1 -3 -5 common emitter i /i =10 c b ta= 100 c ta =25 c ta =-25 c collector current i (ma) 0 c -0.2 0 base-emitter voltage v (v) be be c i - v -0.4 -0.6 -0.8 -1.0 -1.2 -10 -20 -30 -40 -50 common emitter v =-5v ce ta=1 00 c ta=25 c ta =- 25 c
1998. 7. 1 3/3 KTA1024 revision no : 1 collector-emitter voltage v (v) -1 c safe operating area ce collector current i (ma) -3 -10 -30 -100 -300 -1 -3 -5 -10 -30 -50 -100 -300 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature i max(pulse) c i max(continuous) c 100m s 500m s dc operati o n collector power dissipation p (w) c 0.2 20 0 ambient temperature ta ( c) pc - ta 40 60 80 100 120 140 160 0 0.4 0.6 0.8 1.0 1.2
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